SBSP52T1G Specs and Replacement

Type Designator: SBSP52T1G

SMD Transistor Code: AS3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: SOT223

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SBSP52T1G datasheet

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SBSP52T1G

BSP52T1G, BSP52T3G NPN Small-Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is http //onsemi.com designed for medium power surface mount applications. Features MEDIUM POWER The SOT-223 Package can be sol... See More ⇒

Detailed specifications: SBN13003A1, SBN13003HB, SBR13003A, SBR13003B, SBR13003B1, SBR13003BD, SBR13003D, SBR13003H, D882P, SD1127, SD1134, SDT96304, SDT96305, SDTA114YET1G, SDTC114EET1G, SDTC114YET1G, SDTC124EET1

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