All Transistors. SBSP52T1G Datasheet

 

SBSP52T1G Datasheet and Replacement


   Type Designator: SBSP52T1G
   SMD Transistor Code: AS3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: SOT223
 

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SBSP52T1G Datasheet (PDF)

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SBSP52T1G

BSP52T1G, BSP52T3GNPN Small-SignalDarlington TransistorThis NPN small signal Darlington transistor is designed for use inswitching applications, such as print hammer, relay, solenoid and lampdrivers. The device is housed in the SOT-223 package, which ishttp://onsemi.comdesigned for medium power surface mount applications.FeaturesMEDIUM POWER The SOT-223 Package can be sol

Datasheet: SBN13003A1 , SBN13003HB , SBR13003A , SBR13003B , SBR13003B1 , SBR13003BD , SBR13003D , SBR13003H , TIP36C , SD1127 , SD1134 , SDT96304 , SDT96305 , SDTA114YET1G , SDTC114EET1G , SDTC114YET1G , SDTC124EET1 .

History: BC807K-25

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