SD1127 Specs and Replacement

Type Designator: SD1127

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.64 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO39

 SD1127 Substitution

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SD1127 datasheet

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SD1127

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SD1127

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 0.2. Size:208K  inchange semiconductor

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SD1127

isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 9.1. Size:33K  hitachi

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SD1127

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k 130 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC... See More ⇒

Detailed specifications: SBN13003HB, SBR13003A, SBR13003B, SBR13003B1, SBR13003BD, SBR13003D, SBR13003H, SBSP52T1G, BD136, SD1134, SDT96304, SDT96305, SDTA114YET1G, SDTC114EET1G, SDTC114YET1G, SDTC124EET1, SDTC124EET1G

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