SDT96305 Specs and Replacement

Type Designator: SDT96305

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 275 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO204

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SDT96305 datasheet

 ..1. Size:17K  semelab

sdt96305.pdf pdf_icon

SDT96305

SDT96305 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES Low saturation voltages. High current gain at 40A. (20 Typ.) Hermetic metal package. 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) APPLICATIONS 12.70 (0.50) High power sw... See More ⇒

 7.1. Size:10K  semelab

sdt96304.pdf pdf_icon

SDT96305

SDT96304 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. M... See More ⇒

Detailed specifications: SBR13003B1, SBR13003BD, SBR13003D, SBR13003H, SBSP52T1G, SD1127, SD1134, SDT96304, A42, SDTA114YET1G, SDTC114EET1G, SDTC114YET1G, SDTC124EET1, SDTC124EET1G, SDTC144EET1G, SHN1B01FDW1T1G, SJ5438

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