SDT96305 Specs and Replacement
Type Designator: SDT96305
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 275 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO204
SDT96305 Substitution
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SDT96305 datasheet
SDT96305 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES Low saturation voltages. High current gain at 40A. (20 Typ.) Hermetic metal package. 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) APPLICATIONS 12.70 (0.50) High power sw... See More ⇒
SDT96304 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. M... See More ⇒
Detailed specifications: SBR13003B1, SBR13003BD, SBR13003D, SBR13003H, SBSP52T1G, SD1127, SD1134, SDT96304, A42, SDTA114YET1G, SDTC114EET1G, SDTC114YET1G, SDTC124EET1, SDTC124EET1G, SDTC144EET1G, SHN1B01FDW1T1G, SJ5438
Keywords - SDT96305 pdf specs
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History: 2N2856-3 | BCP55-16 | 2N2855-3 | SD1127 | 2N2855-2
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