All Transistors. SDT96305 Datasheet

 

SDT96305 Datasheet and Replacement


   Type Designator: SDT96305
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 275 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO204
 

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SDT96305 Datasheet (PDF)

 ..1. Size:17K  semelab
 sdt96305.pdf pdf_icon

SDT96305

SDT96305MECHANICAL DATADimensions in mmNPN SILICONPOWER TRANSISTOR25.15 (0.99)6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)FEATURES Low saturation voltages. High current gain at 40A. (20 Typ.) Hermetic metal package.1 23(case)3.84 (0.151)4.09 (0.161)7.92 (0.312)APPLICATIONS12.70 (0.50) High power sw

 7.1. Size:10K  semelab
 sdt96304.pdf pdf_icon

SDT96305

SDT96304Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25)26.67 (1.05) 9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 23(case)3.84 (0.151)4.09 (0.161) 7.92 (0.312)12.70 (0.50)TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. M

Datasheet: SBR13003B1 , SBR13003BD , SBR13003D , SBR13003H , SBSP52T1G , SD1127 , SD1134 , SDT96304 , 2N2907 , SDTA114YET1G , SDTC114EET1G , SDTC114YET1G , SDTC124EET1 , SDTC124EET1G , SDTC144EET1G , SHN1B01FDW1T1G , SJ5438 .

History: BCP51-10 | ST1290 | GME6002 | 2SC2174 | BRT60 | 2SB333H | TMPA812M3

Keywords - SDT96305 transistor datasheet

 SDT96305 cross reference
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