All Transistors. SDTA114YET1G Datasheet

 

SDTA114YET1G Datasheet and Replacement


   Type Designator: SDTA114YET1G
   SMD Transistor Code: 6D
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT416
 

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SDTA114YET1G Datasheet (PDF)

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SDTA114YET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

Datasheet: SBR13003BD , SBR13003D , SBR13003H , SBSP52T1G , SD1127 , SD1134 , SDT96304 , SDT96305 , S9018 , SDTC114EET1G , SDTC114YET1G , SDTC124EET1 , SDTC124EET1G , SDTC144EET1G , SHN1B01FDW1T1G , SJ5438 , SJT1941PPN .

History: SC159 | BUF405AFI | BLW10 | TMPA812M5 | FHT5401-ME | 2SC5323 | KT210A

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