MRF235 Datasheet. Specs and Replacement

Type Designator: MRF235  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 130 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: SOT122

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MRF235 datasheet

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MRF235

HG RF POWER TRANSISTOR MRF235 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR NPN Silicon RF power transistor MRF235 Description MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features Specified 12.5V, 90MHz characteristics Output Powe... See More ⇒

Detailed specifications: MRF10502, MRF1090MA, MRF1090MB, MRF1150MA, MRF1150MB, MRF16006, MRF1946, MRF1946A, 2SC5198, MRF240, MRF247, MRF260, MRF261, MRF2628, MRF264, MRF314A, MRF315A

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