All Transistors. MRF235 Datasheet

 

MRF235 Datasheet and Replacement


   Type Designator: MRF235
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SOT122

 MRF235 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF235 Datasheet (PDF)

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MRF235

HG RF POWER TRANSISTOR MRF235 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR NPN Silicon RF power transistor MRF235 Description MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features Specified 12.5V, 90MHz characteristics Output Powe... See More ⇒

Datasheet: MRF10502 , MRF1090MA , MRF1090MB , MRF1150MA , MRF1150MB , MRF16006 , MRF1946 , MRF1946A , 2SC5198 , MRF240 , MRF247 , MRF260 , MRF261 , MRF2628 , MRF264 , MRF314A , MRF315A .

History: RN2709JE | KT837N1-IM | DMA20401 | 2SD1409O | RN2910 | 2SD1407 | MSC80197

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