MRF235 Datasheet and Replacement
Type Designator: MRF235
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: SOT122
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MRF235 Datasheet (PDF)
mrf235.pdf

HG RF POWER TRANSISTORMRF235SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNPN Silicon RF power transistor MRF235Description: MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features: Specified 12.5V, 90MHz characteristics Output Powe
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MRF223 | SD1439 | ZXTP25020DG | GES2905A | SF016 | KRA552F | CMST5087
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History: MRF223 | SD1439 | ZXTP25020DG | GES2905A | SF016 | KRA552F | CMST5087



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