MRF412 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF412
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 240 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 450 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT121
MRF412 Transistor Equivalent Substitute - Cross-Reference Search
MRF412 Datasheet (PDF)
mrf412.pdf
ELEFLOW TECHNOLOGIES MRF412www.eleflow.com NPN Silicon RF power transistor MRF412 Description: MRF412 is designed primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required. Features: Specified 13.6V, 30MHz characteristics: Pout: 70W PEP or CW, Min Gpe: 13dB, Effici
mrf410.pdf
ELEFLOW TECHNOLOGIES MRF410www.eleflow.com NPN Bipolar RF power transistor MRF410 Description: MRF410 is designed primarily for HF, VHF, UHF, 800MHz, and Microwave applications in military and commercial land mobile, avionics, and marine transmitters. Features: 1.5-30MHz, HF/SSB Transistors. Designed for broadband operation, these devices feature specified intermodulation dist
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
