MRF412 Datasheet. Specs and Replacement
Type Designator: MRF412 ππ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 240 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 200 Β°C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 450 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT121
MRF412 Substitution
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MRF412 datasheet
ELEFLOW TECHNOLOGIES MRF412 www.eleflow.com NPN Silicon RF power transistor MRF412 Description MRF412 is designed primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required. Features Specified 13.6V, 30MHz characteristics Pout 70W PEP or CW, Min Gpe 13dB, Effici... See More ⇒
ELEFLOW TECHNOLOGIES MRF410 www.eleflow.com NPN Bipolar RF power transistor MRF410 Description MRF410 is designed primarily for HF, VHF, UHF, 800MHz, and Microwave applications in military and commercial land mobile, avionics, and marine transmitters. Features 1.5-30MHz, HF/SSB Transistors. Designed for broadband operation, these devices feature specified intermodulation dist... See More ⇒
Detailed specifications: MRF2628, MRF264, MRF314A, MRF315A, MRF329, MRF392, MRF393, MRF410, TIP142, MRF427A, MRF429, MRF448, MRF449A, MRF450A, MRF453A, MRF466, MRF477
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