MRF497 Datasheet. Specs and Replacement

Type Designator: MRF497  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 87.5 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220AB

 MRF497 Substitution

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MRF497 datasheet

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MRF497

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF492/D The RF Line NPN Silicon MRF492 RF Power Transistor Designed for 12.5 volt low band VHF large signal power amplifier applica- tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W 70 W, 50 MHz Minimum Gain = 11 dB RF POWER Efficiency = 50% TRANSI... See More ⇒

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MRF497

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF492/D The RF Line NPN Silicon MRF492 RF Power Transistor Designed for 12.5 volt low band VHF large signal power amplifier applica- tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W 70 W, 50 MHz Minimum Gain = 11 dB RF POWER Efficiency = 50% TRANSI... See More ⇒

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Detailed specifications: MRF450A, MRF453A, MRF466, MRF477, MRF479, MRF486, MRF492, MRF492A, D667, MRF544, MRF545, MRF555, MRF572, MRF581, MRF581A, MRF587, MRF630

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