MRF497 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF497
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 87.5 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220AB
MRF497 Transistor Equivalent Substitute - Cross-Reference Search
MRF497 Datasheet (PDF)
mrf492re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI
mrf492.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI
mrf492.pdf
HG RF POWER TRANSISTORMRF492SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 WMinimum Gain = 11 dBEfficiency = 50% Load Mismatch Capability at High Line and RF OverdriveMAX
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
