MRF544
Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF544
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3.5
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 70
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.4
A
Transition Frequency (ft): 1000
MHz
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO39
MRF544
Transistor Equivalent Substitute - Cross-Reference Search
MRF544
Datasheet (PDF)
..1. Size:335K hgsemi
mrf544.pdf
HG RF POWER TRANSISTORMRF544SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures Silicon NPN, high Frequency, high breakdown, To-39 packaged,Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz1. Emitter2. Base3. Collector High Collector Base Breakdown Voltage - BVCBO = 100 V (min)TO-39 High FT - 1400 MHzDESCRIPTION:Designe
9.1. Size:338K hgsemi
mrf545.pdf
HG RF POWER TRANSISTORMRF545SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures Silicon PNP, high Frequency, high breakdown, To-39 packaged,Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz1. Emitter2. Base3. Collector High Collector Base Breakdown Voltage - BVCBO = 100 V (min)TO-39 High FT - 1400 MHzDESCRIPTION:Designed
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