All Transistors. MRF545 Datasheet

 

MRF545 Datasheet and Replacement


   Type Designator: MRF545
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO39
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MRF545 Datasheet (PDF)

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MRF545

HG RF POWER TRANSISTORMRF545SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures Silicon PNP, high Frequency, high breakdown, To-39 packaged,Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz1. Emitter2. Base3. Collector High Collector Base Breakdown Voltage - BVCBO = 100 V (min)TO-39 High FT - 1400 MHzDESCRIPTION:Designed

 9.1. Size:335K  hgsemi
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MRF545

HG RF POWER TRANSISTORMRF544SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures Silicon NPN, high Frequency, high breakdown, To-39 packaged,Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz1. Emitter2. Base3. Collector High Collector Base Breakdown Voltage - BVCBO = 100 V (min)TO-39 High FT - 1400 MHzDESCRIPTION:Designe

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: PN4403 | ZTX653DCSM | BFY77 | BD477A | BD175 | 3CD010G | KSP75

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