MRF545 Datasheet. Specs and Replacement

Type Designator: MRF545  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 3.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1000 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO39

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MRF545 datasheet

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MRF545

HG RF POWER TRANSISTOR MRF545 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz 1. Emitter 2. Base 3. Collector High Collector Base Breakdown Voltage - BVCBO = 100 V (min) TO-39 High FT - 1400 MHz DESCRIPTION Designed ... See More ⇒

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MRF545

HG RF POWER TRANSISTOR MRF544 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz 1. Emitter 2. Base 3. Collector High Collector Base Breakdown Voltage - BVCBO = 100 V (min) TO-39 High FT - 1400 MHz DESCRIPTION Designe... See More ⇒

Detailed specifications: MRF466, MRF477, MRF479, MRF486, MRF492, MRF492A, MRF497, MRF544, BDT88, MRF555, MRF572, MRF581, MRF581A, MRF587, MRF630, MRF650, MRF652

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