MRF630 Datasheet. Specs and Replacement
Type Designator: MRF630 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8.75 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 512 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO39
MRF630 Substitution
- BJT ⓘ Cross-Reference Search
MRF630 datasheet
MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI MRF630 is Designed for UHF large signal, FM Land Mobile PACKAGE STYLE TO 205AD Applications up to 512 MHz. FEATURES MILLIMETERS INCHES DIM MIN MAX MIN MAX Grounded Emitter A 9.02 9.29 0.355 0.366 B 8.01 8.50 0.315 0.335 PG = 9.5 dB at 3.0 W/470 MHz C 4.20 4.57 0.165 0.180 Omnigold Metalization Sys... See More ⇒
Detailed specifications: MRF497, MRF544, MRF545, MRF555, MRF572, MRF581, MRF581A, MRF587, 2N3904, MRF650, MRF652, MRF652S, MRF653, MRF654, MRF658, MRF839, MRF839F
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