MRF630 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF630
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8.75 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 512 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO39
MRF630 Transistor Equivalent Substitute - Cross-Reference Search
MRF630 Datasheet (PDF)
..1. Size:58K no
mrf630.pdf
mrf630.pdf
MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile PACKAGE STYLE TO 205AD Applications up to 512 MHz. FEATURES:MILLIMETERS INCHESDIM MIN MAX MIN MAX Grounded EmitterA 9.02 9.29 0.355 0.366B 8.01 8.50 0.315 0.335 PG = 9.5 dB at 3.0 W/470 MHz C 4.20 4.57 0.165 0.180 Omnigold Metalization Sys
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
