MRF839 Datasheet. Specs and Replacement

Type Designator: MRF839  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 960 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT122

 MRF839 Substitution

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MRF839 datasheet

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MRF839

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MRF839

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF839F/D The RF Line NPN Silicon MRF839F RF Power Transistors . . . designed for 12.5 Volt UHF large signal, common emitter amplifier applications in industrial and commercial FM equipment operating in the range of 806 960 MHz. Specified 12.5 V, 870 MHz Characteristics 3.0 W, 806 960 MHz Output Power = 3.0 Wa... See More ⇒

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MRF839

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF839F/D The RF Line NPN Silicon MRF839F RF Power Transistors . . . designed for 12.5 Volt UHF large signal, common emitter amplifier applications in industrial and commercial FM equipment operating in the range of 806 960 MHz. Specified 12.5 V, 870 MHz Characteristics 3.0 W, 806 960 MHz Output Power = 3.0 Wa... See More ⇒

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MRF839

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Detailed specifications: MRF587, MRF630, MRF650, MRF652, MRF652S, MRF653, MRF654, MRF658, BC548, MRF839F, MRF857S, MRF891, MRF891S, MRF894, MRF897, MRF897R, MRF899

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