MRF839 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF839
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 960 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: SOT122
MRF839 Transistor Equivalent Substitute - Cross-Reference Search
MRF839 Datasheet (PDF)
mrf839fr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa
mrf839f.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
