MRF857S Datasheet. Specs and Replacement

Type Designator: MRF857S  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 17 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 960 MHz

Collector Capacitance (Cc): 3.3 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO50

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MRF857S datasheet

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MRF857S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF857/D The RF Line NPN Silicon MRF857S RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics 2.1... See More ⇒

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MRF857S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF857/D The RF Line MRF857 NPN Silicon MRF857S RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 0.3 Adc Characterist... See More ⇒

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MRF857S

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 8.1. Size:103K  motorola

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MRF857S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF857/D The RF Line NPN Silicon MRF857S RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. CLASS A 800 960 MHz Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics 2.1... See More ⇒

Detailed specifications: MRF650, MRF652, MRF652S, MRF653, MRF654, MRF658, MRF839, MRF839F, C5198, MRF891, MRF891S, MRF894, MRF897, MRF897R, MRF899, MRFC572, MS1226

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