All Transistors. MS1226 Datasheet

 

MS1226 Datasheet and Replacement


   Type Designator: MS1226
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M113
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MS1226 Datasheet (PDF)

 ..1. Size:353K  hgsemi
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MS1226

HG RF POWER TRANSISTORMS1226SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistordesigned primarily for SSB communications. This deviceutilizes

 9.1. Size:112K  apt
 ms1227.pdf pdf_icon

MS1226

MS1227RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONSFeatures 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1227 is a 12.5V epitaxial NPN planar transistor designedprimarily for SSB communications. This device utilizes emitterballasting for improved ruggedness and reliabil

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | 2SC4632 | MG75H2DL1 | CMPTA44 | 2G603 | RN1909 | 2SC3593

Keywords - MS1226 transistor datasheet

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