MS1226 Datasheet. Specs and Replacement
Type Designator: MS1226 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M113
MS1226 Substitution
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MS1226 datasheet
HG RF POWER TRANSISTOR MS1226 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes ... See More ⇒
MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliabil... See More ⇒
Detailed specifications: MRF857S, MRF891, MRF891S, MRF894, MRF897, MRF897R, MRF899, MRFC572, TIP3055, MS1227, MS1261, MS1329, MS1501, MS1649, MS2202, MS2203, MS2204
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