MS1226 Datasheet, Equivalent, Cross Reference Search
Type Designator: MS1226
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M113
MS1226 Transistor Equivalent Substitute - Cross-Reference Search
MS1226 Datasheet (PDF)
ms1226.pdf
HG RF POWER TRANSISTORMS1226SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistordesigned primarily for SSB communications. This deviceutilizes
ms1227.pdf
MS1227RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONSFeatures 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1227 is a 12.5V epitaxial NPN planar transistor designedprimarily for SSB communications. This device utilizes emitterballasting for improved ruggedness and reliabil
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BDX54D
