All Transistors. MS1226 Datasheet

 

MS1226 Datasheet and Replacement


   Type Designator: MS1226
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M113
 

 MS1226 Substitution

   - BJT ⓘ Cross-Reference Search

   

MS1226 Datasheet (PDF)

 ..1. Size:353K  hgsemi
 ms1226.pdf pdf_icon

MS1226

HG RF POWER TRANSISTORMS1226SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistordesigned primarily for SSB communications. This deviceutilizes

 9.1. Size:112K  apt
 ms1227.pdf pdf_icon

MS1226

MS1227RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONSFeatures 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1227 is a 12.5V epitaxial NPN planar transistor designedprimarily for SSB communications. This device utilizes emitterballasting for improved ruggedness and reliabil

Datasheet: MRF857S , MRF891 , MRF891S , MRF894 , MRF897 , MRF897R , MRF899 , MRFC572 , 13009 , MS1227 , MS1261 , MS1329 , MS1501 , MS1649 , MS2202 , MS2203 , MS2204 .

History: BUW131H | TI450 | LBC817-25WT1G | LMBT4403LT1G | BFR90 | SJT5198NPN | TI433

Keywords - MS1226 transistor datasheet

 MS1226 cross reference
 MS1226 equivalent finder
 MS1226 lookup
 MS1226 substitution
 MS1226 replacement

 

 
Back to Top

 


 
.