MS1329 Datasheet and Replacement
Type Designator: MS1329
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: SOT120
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MS1329 Datasheet (PDF)
ms1329.pdf

HG RF POWER TRANSISTORMS1329SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures FeaturesFeaturesFeatures 150 MHz 28 VOLTS P OUT = 60W G = 7.0 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: DESCRIPTION:DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: EFT311 | 3CK5323 | BD144 | 2SD774 | 2SC5594 | TMPC1654N6 | 2SD1405GR
Keywords - MS1329 transistor datasheet
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History: EFT311 | 3CK5323 | BD144 | 2SD774 | 2SC5594 | TMPC1654N6 | 2SD1405GR



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