MS1329 Datasheet. Specs and Replacement

Type Designator: MS1329  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 6.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT120

 MS1329 Substitution

- BJT ⓘ Cross-Reference Search

 

MS1329 datasheet

 ..1. Size:427K  hgsemi

 ms1329.pdf pdf_icon

MS1329

HG RF POWER TRANSISTOR MS1329 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features Features Features 150 MHz 28 VOLTS P OUT = 60W G = 7.0 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class... See More ⇒

Detailed specifications: MRF894, MRF897, MRF897R, MRF899, MRFC572, MS1226, MS1227, MS1261, TIP42C, MS1501, MS1649, MS2202, MS2203, MS2204, MS8050-H, MS8050-L, MSA1162GT1G

Keywords - MS1329 pdf specs

 MS1329 cross reference

 MS1329 equivalent finder

 MS1329 pdf lookup

 MS1329 substitution

 MS1329 replacement