All Transistors. MS1329 Datasheet

 

MS1329 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MS1329
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 6.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT120

 MS1329 Transistor Equivalent Substitute - Cross-Reference Search

   

MS1329 Datasheet (PDF)

 ..1. Size:427K  hgsemi
 ms1329.pdf

MS1329 MS1329

HG RF POWER TRANSISTORMS1329SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures FeaturesFeaturesFeatures 150 MHz 28 VOLTS P OUT = 60W G = 7.0 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: DESCRIPTION:DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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