All Transistors. MS1329 Datasheet

 

MS1329 Datasheet and Replacement


   Type Designator: MS1329
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 6.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT120
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MS1329 Datasheet (PDF)

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MS1329

HG RF POWER TRANSISTORMS1329SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeatures FeaturesFeaturesFeatures 150 MHz 28 VOLTS P OUT = 60W G = 7.0 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: DESCRIPTION:DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: EFT311 | 3CK5323 | BD144 | 2SD774 | 2SC5594 | TMPC1654N6 | 2SD1405GR

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