All Transistors. MS1329 Datasheet

 

MS1329 Datasheet and Replacement


   Type Designator: MS1329
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 6.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT120

 MS1329 Transistor Equivalent Substitute - Cross-Reference Search

   

MS1329 Datasheet (PDF)

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MS1329

HG RF POWER TRANSISTOR MS1329 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features Features Features 150 MHz 28 VOLTS P OUT = 60W G = 7.0 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class... See More ⇒

Datasheet: MRF894 , MRF897 , MRF897R , MRF899 , MRFC572 , MS1226 , MS1227 , MS1261 , TIP42C , MS1501 , MS1649 , MS2202 , MS2203 , MS2204 , MS8050-H , MS8050-L , MSA1162GT1G .

History: 2SD1949 | NB111EJ | 2SD965A-S | 2SC313A | 2SB920LS | 2SA1577FRA | 2SC6096-TD-H

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