MS1649 Datasheet, Equivalent, Cross Reference Search
Type Designator: MS1649
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15.9 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 470 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO39
MS1649 Transistor Equivalent Substitute - Cross-Reference Search
MS1649 Datasheet (PDF)
..1. Size:305K hgsemi
ms1649.pdf
ms1649.pdf
HG RF POWER TRANSISTORMS1501SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
