All Transistors. MS1649 Datasheet

 

MS1649 Datasheet and Replacement


   Type Designator: MS1649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15.9 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 470 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO39
 

 MS1649 Substitution

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MS1649 Datasheet (PDF)

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MS1649

HG RF POWER TRANSISTORMS1501SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the

Datasheet: MRF897R , MRF899 , MRFC572 , MS1226 , MS1227 , MS1261 , MS1329 , MS1501 , 13003 , MS2202 , MS2203 , MS2204 , MS8050-H , MS8050-L , MSA1162GT1G , MSB1218A-RT1 , MSB1218A-RT1G .

History: BFR69B | BDY94-01 | 2SC3410 | MT3S111TU | 2SC5945 | KSB811Y | MT4S102U

Keywords - MS1649 transistor datasheet

 MS1649 cross reference
 MS1649 equivalent finder
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