All Transistors. MS1649 Datasheet

 

MS1649 Datasheet and Replacement


   Type Designator: MS1649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15.9 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 470 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO39
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MS1649 Datasheet (PDF)

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MS1649

HG RF POWER TRANSISTORMS1501SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BFT71 | KTD2686 | 2SC3940 | MQ3693 | HSE904 | C720 | RN4610

Keywords - MS1649 transistor datasheet

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