MS1649 Datasheet. Specs and Replacement

Type Designator: MS1649  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15.9 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 470 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO39

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MS1649 datasheet

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MS1649

HG RF POWER TRANSISTOR MS1501 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 860 MHz POUT = 2 WATTS GP = 8.5 dB MINIMUM GOLD METALLIZATION CLASS A LINEAR OPERATION COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the... See More ⇒

Detailed specifications: MRF897R, MRF899, MRFC572, MS1226, MS1227, MS1261, MS1329, MS1501, 2N3906, MS2202, MS2203, MS2204, MS8050-H, MS8050-L, MSA1162GT1G, MSB1218A-RT1, MSB1218A-RT1G

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