MT4S102T Datasheet, Equivalent, Cross Reference Search
Type Designator: MT4S102T
SMD Transistor Code: P8
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 3 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25000 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: 2-1G1B
MT4S102T Transistor Equivalent Substitute - Cross-Reference Search
MT4S102T Datasheet (PDF)
mt4s102t.pdf
MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm1.20.05 FEATURES 0.90.05 Low Noise Figure :NF=0.58dB (@f=2GHz) High Gain:|S21e|2=16.0dB (@f=2GHz) Marking 4 3 P 8 1. Collector 1 2 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25C) TESQ JEDEC -Cha
mt4s102u.pdf
MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm2.10.1 1.250.1 FEATURES Low Noise Figure :NF=0.58dB (@f=2GHz) High Gain:|S21e|2=15.0dB (@f=2GHz) Marking 4 3 P 8 1. COLLECTOR1 22. EMITTER3. BASE 4. EMITTER Absolute Maximum Ratings (Ta = 25C) USQCharacteristics S
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BSY23
