All Transistors. MT4S102T Datasheet

 

MT4S102T Datasheet and Replacement


   Type Designator: MT4S102T
   SMD Transistor Code: P8
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.06 W
   Maximum Collector-Base Voltage |Vcb|: 6 V
   Maximum Collector-Emitter Voltage |Vce|: 3 V
   Maximum Emitter-Base Voltage |Veb|: 1.2 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25000 MHz
   Collector Capacitance (Cc): 0.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: 2-1G1B
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MT4S102T Datasheet (PDF)

 ..1. Size:107K  toshiba
 mt4s102t.pdf pdf_icon

MT4S102T

MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm1.20.05 FEATURES 0.90.05 Low Noise Figure :NF=0.58dB (@f=2GHz) High Gain:|S21e|2=16.0dB (@f=2GHz) Marking 4 3 P 8 1. Collector 1 2 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25C) TESQ JEDEC -Cha

 7.1. Size:91K  toshiba
 mt4s102u.pdf pdf_icon

MT4S102T

MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm2.10.1 1.250.1 FEATURES Low Noise Figure :NF=0.58dB (@f=2GHz) High Gain:|S21e|2=15.0dB (@f=2GHz) Marking 4 3 P 8 1. COLLECTOR1 22. EMITTER3. BASE 4. EMITTER Absolute Maximum Ratings (Ta = 25C) USQCharacteristics S

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: ZTX300 | UN621K | CHDTA115TEGP | KRA567U | D11C1053 | BD544D | 2SD1179

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