MT4S102T Datasheet. Specs and Replacement
Type Designator: MT4S102T 📄📄
SMD Transistor Code: P8
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 3 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25000 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: 2-1G1B
MT4S102T Substitution
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MT4S102T datasheet
MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit mm 1.2 0.05 FEATURES 0.9 0.05 Low Noise Figure NF=0.58dB (@f=2GHz) High Gain S21e 2=16.0dB (@f=2GHz) Marking 4 3 P 8 1. Collector 1 2 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25 C) TESQ JEDEC - Cha... See More ⇒
MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit mm 2.1 0.1 1.25 0.1 FEATURES Low Noise Figure NF=0.58dB (@f=2GHz) High Gain S21e 2=15.0dB (@f=2GHz) Marking 4 3 P 8 1. COLLECTOR 1 2 2. EMITTER 3. BASE 4. EMITTER Absolute Maximum Ratings (Ta = 25 C) USQ Characteristics S... See More ⇒
Detailed specifications: MSG430D4, MT3S106FS, MT3S111, MT3S111P, MT3S111TU, MT3S113, MT3S113P, MT3S113TU, D209L, MT4S102U, MT4S300U, MT4S301U, MT6L03AE, MT6L04AE, MT6L71FS, MT6L76FS, MT6L77FS
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