All Transistors. MP6301 Datasheet

 

MP6301 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MP6301
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: 2-32C1F

 MP6301 Transistor Equivalent Substitute - Cross-Reference Search

   

MP6301 Datasheet (PDF)

 ..1. Size:97K  toshiba
mp6301.pdf

MP6301 MP6301

MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) MP6301 Industrial Applications High Power Switching Applications Unit: mm3-Phase Motor Drive and Bipolar Drive of Pulse Motor Small package by full molding (SIP 12 pin) High collector power dissipation (6 devices operation) : P = 4.4 W (Ta = 25C) T High c

 ..2. Size:153K  toshiba
mp6301 .pdf

MP6301 MP6301

MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Six Darlington Power Transistors inOne) MP6301 Industrial Applications High Power Switching Applications Unit: mm3-Phase Motor Drive and Bipolar Drive of Pulse Motor Small package by full molding (SIP 12 pins) High collector power dissipation (6-device operation) : PT = 4.4 W (Ta = 25C) Hi

 9.1. Size:607K  trinnotech
tmp630z tmpf630z.pdf

MP6301 MP6301

TMP630Z(G)/TMPF630Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top