MP6301 Datasheet. Specs and Replacement
Type Designator: MP6301 📄📄
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: 2-32C1F
MP6301 Substitution
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MP6301 datasheet
MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) MP6301 Industrial Applications High Power Switching Applications Unit mm 3-Phase Motor Drive and Bipolar Drive of Pulse Motor Small package by full molding (SIP 12 pin) High collector power dissipation (6 devices operation) P = 4.4 W (Ta = 25 C) T High c... See More ⇒
MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Six Darlington Power Transistors inOne) MP6301 Industrial Applications High Power Switching Applications Unit mm 3-Phase Motor Drive and Bipolar Drive of Pulse Motor Small package by full molding (SIP 12 pins) High collector power dissipation (6-device operation) PT = 4.4 W (Ta = 25 C) Hi... See More ⇒
TMP630Z(G)/TMPF630Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒
Detailed specifications: MP4T3243, MP4T6310, MP4T6325, MP4T6365, MP4T645, MP4T801, MP4T802, MP4T856, 2N3055, MP6901, MPQ3467, MPQ3725, MPQ3725A, MPQ3762, MPQ3798, MPQ3799, MPQ6002
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