BDS20SMD Datasheet. Specs and Replacement

Type Designator: BDS20SMD  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO276AB

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BDS20SMD datasheet

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BDS20SMD

SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 80V VCEO Collector Emitter Voltage 80V VE... See More ⇒

Detailed specifications: BDS17SMD05, BDS17X, BDS17XSMD, BDS17XSMD05, BDS18SMD, BDS18SMD05, BDS19SMD, BDS19SMD05, 2N5551, BDS21SMD, BDS28AM3A, BDS28AN2, BDS28BM3A, BDS28BN2, BDS28BSMD, BDS28CM3A, BDS28CN2

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