All Transistors. BDS20SMD Datasheet

 

BDS20SMD Datasheet, Equivalent, Cross Reference Search

Type Designator: BDS20SMD

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO276AB

BDS20SMD Transistor Equivalent Substitute - Cross-Reference Search

 

BDS20SMD Datasheet (PDF)

1.1. bds20smd.pdf Size:452K _update

BDS20SMD
BDS20SMD

SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 80V VE

Datasheet: BDS17SMD05 , BDS17X , BDS17XSMD , BDS17XSMD05 , BDS18SMD , BDS18SMD05 , BDS19SMD , BDS19SMD05 , 8050 , BDS21SMD , BDS28AM3A , BDS28AN2 , BDS28BM3A , BDS28BN2 , BDS28BSMD , BDS28CM3A , BDS28CN2 .

 


BDS20SMD
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