BLV948 Datasheet. Specs and Replacement
Type Designator: BLV948 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 320 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 12.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 960 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT262
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BLV948 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV946 UHF power transistor 1997 Oct 30 Product specification Supersedes data of 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV946 FEATURES PINNING - SOT273A Internal input and output matching for easy matching, PIN DESCRIPTION high gain and efficiency 1 emitter Poly-silicon emitter ballasting resistors... See More ⇒
Detailed specifications: BFX34SMD, BFX34SMD05, BFX48DCSM, BFY90DCSM, BLD128DD, BLV38, BLV62, BLV80, MPSA42, BLV97CE, BLX65E, BLX65ES, BLY93H, BR3CA1353F, BR3CG3802, BR3CG984K, BR3DA122DK
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BJT Parameters and How They Relate
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