All Transistors. BLX65ES Datasheet

 

BLX65ES Datasheet, Equivalent, Cross Reference Search

Type Designator: BLX65ES

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 1400 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO39

BLX65ES Transistor Equivalent Substitute - Cross-Reference Search

 

BLX65ES Datasheet (PDF)

1.1. blx65es.pdf Size:66K _update

BLX65ES
BLX65ES



4.1. blx65e.pdf Size:66K _update

BLX65ES
BLX65ES



Datasheet: BFY90DCSM , BLD128DD , BLV38 , BLV62 , BLV80 , BLV948 , BLV97CE , BLX65E , 2N3563 , BLY93H , BR3CA1353F , BR3CG3802 , BR3CG984K , BR3DA122DK , BR3DA6821K , BR3DD13002DG1K , BR3DD13002E1K .

 


BLX65ES
  BLX65ES
  BLX65ES
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |