BR3DG536K Specs and Replacement
Type Designator: BR3DG536K
SMD Transistor Code: BRA536
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
BR3DG536K Substitution
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BR3DG536K datasheet
2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl... See More ⇒
2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit ... See More ⇒
KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642 BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier. ... See More ⇒
Detailed specifications: BR3DD13009X7R , BR3DD13009X8F , BR3DD13009X9P , BR3DD13009Z8F , BR3DD5555R , BR3DD6802Q , BR3DG1684 , BR3DG227K , TIP122 , BRF90G , BSV52LT1G , BSV62SMD , BSV62SMD05 , BSV64SMD , BSX20DCSM , BSX33CSM , BSX33DCSM .
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