BSV64SMD Specs and Replacement
Type Designator: BSV64SMD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 5 A
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO276AB
BSV64SMD Substitution
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BSV64SMD datasheet
BSV64SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0.... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor 1997 Sep 04 Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor BSV64 FEATURES PINNING High current (max. 2 A) PIN DESCRIPTION Low voltage (max. 60 V) 1 emitter Good high curren... See More ⇒
Detailed specifications: BR3DD6802Q, BR3DG1684, BR3DG227K, BR3DG536K, BRF90G, BSV52LT1G, BSV62SMD, BSV62SMD05, D882, BSX20DCSM, BSX33CSM, BSX33DCSM, BSX36DCSM, BSX62SMD, BSX62SMD05, BSX63SMD, BSX64SMD
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