All Transistors. BRF91G Datasheet

 

BRF91G Datasheet and Replacement


   Type Designator: BRF91G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.18 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: M236
 

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BRF91G Datasheet (PDF)

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BRF91G

140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855BFR91BFR91GRF & MICROWAVE DISCRETE* G Denotes RoHS Compliant, Pb Free Terminal FinishLOW POWER TRANSISTORSFeatures High Current-Gain Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz High Power Gain

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY78C | GES3634 | 2N916A | 2SD1161P6 | BD233-10

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