BRF91G Specs and Replacement

Type Designator: BRF91G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.18 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M236

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BRF91G datasheet

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BRF91G

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 BFR91 BFR91G RF & MICROWAVE DISCRETE * G Denotes RoHS Compliant, Pb Free Terminal Finish LOW POWER TRANSISTORS Features High Current-Gain Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz High Power Gain... See More ⇒

Detailed specifications: BSX33DCSM, BSX36DCSM, BSX62SMD, BSX62SMD05, BSX63SMD, BSX64SMD, BSX64SMD05, BRF91, 2SC2073, BSP16T1G, BSP19AT1G, BSP20A, BSP52T1G, BSP52T3G, BSS50A, BSS51A, BSS52A

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