2SC5501A-4-TR-E Specs and Replacement
Type Designator: 2SC5501A-4-TR-E
SMD Transistor Code: LN
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.75 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT343
2SC5501A-4-TR-E Substitution
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2SC5501A-4-TR-E datasheet
Ordering number ENA1061A 2SC5501A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =13dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Large allowable collector dissipation PC=500mW max Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ra... See More ⇒
Ordering number ENA1061 2SC5501A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5501A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=13dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Large allowable collector dissipation PC=500mW max. Specifications Abso... See More ⇒
Ordering number ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2161 High cutoff frequency fT=7GHz typ. [2SC5501] Large allowable collector dissipation PC=500mW max. 0.65 0.65 0.15 ... See More ⇒
Detailed specifications: 2SC536K, 2SC536S, 2SC5374A-TL-E, 2SC5397, 2SC5415AE-TD-E, 2SC5415AF-TD-E, 2SC5488A-TL-H, 2SC5490A-TL-H, 2SC2073, 2SC5536A-TL-H, 2SC5551AE-TD-E, 2SC5551AF-TD-E, 2SC5566-TD-E, 2SC5569-TD-E, 2SC5621, 2SC5625, 2SC5633
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