2SC5814 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5814
SMD Transistor Code: EQ_ER_ES_EE_EF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.13 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
2SC5814 Transistor Equivalent Substitute - Cross-Reference Search
2SC5814 Datasheet (PDF)
2sc5814.pdf
SMALL-SIGNAL TRANSISTOR 2SC5814 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC5814 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage application. FEATURE Low collector to emitter saturation voltage. VCE(sat)=0.3V max(@IC=30mA, IB=1.5mA) Fac
2sc5810.pdf
2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage: V = 0.17 V (max) CE (sat) High-speed switching: t = 85 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristi
2sc5819.pdf
2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) fMaximum Ratings (Ta == 25C) ==
2sc5813.pdf
Transistors2SC5813Silicon NPN epitaxial planar typeFor DC-DC converterUnit: mm0.40+0.100.050.16+0.100.06 Features3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings Ta = 25
2sc5812.pdf
2SC5812Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1468(Z)Rev.0Nov. 2001Features High power gain, Low noise figure at low power operation:|S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)OutlineMFPAK311. Emitter22. Base3. CollectorNote: Marking is WG.2SC5812Absolute Maximum Ratings(Ta = 25C)Item Symbol Ra
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: D44T2
