MJE1123 Specs and Replacement
Type Designator: MJE1123
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 11.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO220AB
MJE1123 Substitution
MJE1123 datasheet
mje1123r.pdf
Order this document MOTOROLA by MJE1123/D SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator PNP LOW DROPOUT TRANSISTOR Transistor 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery powered systems and other applications. The MJE1123 is ... See More ⇒
Detailed specifications: 2SD2098GP , 2SD2098PGP , 2SD2137A , 2SD2144S , 2SD2152 , 2SD2173 , 2SD2227S , 2SD2318 , BC547 , MJE13001A0 , MJE13001A1 , MJE13001A2 , MJE13001AT , MJE13001B1 , MJE13001C0 , MJE13001C1 , MJE13001C2 .
History: KSB834W
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History: KSB834W
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