MJH16018 Datasheet, Equivalent, Cross Reference Search

   Type Designator: MJH16018
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO218

MJH16018 Transistor Equivalent Substitute - Cross-Reference Search

MJH16018 Datasheet (PDF)

..1. Size:97K njs
mjh16018.pdf

..2. Size:219K inchange semiconductor
mjh16018.pdf

isc Silicon NPN Power Transistor MJH16018DESCRIPTIONCollector-Emitter Voltage-: V = 800V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed , power switching ininductive circuits where fall time is critical. They are particu-larly suited for line operated swi

7.1. Size:119K njs
mjh16012.pdf