MJH16018 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJH16018

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO218

MJH16018 Transistor Equivalent Substitute - Cross-Reference Search

MJH16018 Datasheet (PDF)

1.1. mjh16018.pdf Size:97K _update

1.2. mjh16018.pdf Size:143K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJH16018 DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 800V(Min) ·Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particu- larly suited for line operated switchmode applications as: ·Switc

3.1. mjh16012.pdf Size:119K _update