All Transistors. 3CD010 Datasheet

 

3CD010 Datasheet and Replacement


   Type Designator: 3CD010
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO257
 

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3CD010 Datasheet (PDF)

 ..1. Size:145K  china
 3cd010.pdf pdf_icon

3CD010

3CD010 PNP B C D E F G H PCM TA=75 10 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=1mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=0.5m 4.0 V ICBO VCBA

 0.1. Size:208K  inchange semiconductor
 3cd010g.pdf pdf_icon

3CD010

isc Silicon PNP Power Transistor 3CD010GDESCRIPTIONDC Current Gain: h = 15@I = -0.75AFE CCollector-Emitter Sustaining Voltage: V = -200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYM

Datasheet: MJW1302AG , MJW21191 , MJW21192 , MJW21193G , MJW21194G , MJW21195G , MJW21196G , MJW3281AG , S9014 , 3CD020 , 3CD030 , 3CD050 , 3CD075 , 3CD1 , 3CD100 , 3CD1010 , 3CD102 .

Keywords - 3CD010 transistor datasheet

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