3CD010 Specs and Replacement
Type Designator: 3CD010
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO257
3CD010 Substitution
- BJT ⓘ Cross-Reference Search
3CD010 datasheet
3CD010 PNP B C D E F G H PCM TA=75 10 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=1mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=0.5m 4.0 V ICBO VCBA ... See More ⇒
isc Silicon PNP Power Transistor 3CD010G DESCRIPTION DC Current Gain h = 15@I = -0.75A FE C Collector-Emitter Sustaining Voltage V = -200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYM... See More ⇒
Detailed specifications: MJW1302AG, MJW21191, MJW21192, MJW21193G, MJW21194G, MJW21195G, MJW21196G, MJW3281AG, 2SC2073, 3CD020, 3CD030, 3CD050, 3CD075, 3CD1, 3CD100, 3CD1010, 3CD102
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