3CD1 Specs and Replacement
Type Designator: 3CD1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
3CD1 datasheet
0.1. Size:215K diodes
zx3cd1s1m832.pdf 
ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor VCEO =-12V; RSAT = 65m ; = -4A C Schottky Diode VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky bar... See More ⇒
0.2. Size:123K china
3cd100.pdf
3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V... See More ⇒
0.3. Size:226K lzg
3cd1375.pdf
2SB1375(3CD1375) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD2012(3DD2012) /Features Low V , CE(sat) High P , complementary pair with 2SD2012(3DD2012). C /Absolute maximum ratings(Ta=25 ) ... See More ⇒
0.4. Size:229K lzg
3cd1290.pdf
2SB1290(3CD1290) PNP /SILICON PNP TRANSISTOR Purpose General power amplifier applications. , , , 2SD1833(3DD1833) Features Low V ,excellent DC current gain characteristics, wide SOA, complements the CE(sat) 2SD1833(3DD1833). /A... See More ⇒
0.5. Size:228K lzg
3cd1094.pdf
2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD1585(3DD1585) Features Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V ... See More ⇒
0.7. Size:29K shaanxi
3cd102.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify... See More ⇒
0.8. Size:26K shaanxi
3cd150.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC... See More ⇒
0.9. Size:23K shaanxi
3cd103.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC... See More ⇒
Detailed specifications: MJW21195G, MJW21196G, MJW3281AG, 3CD010, 3CD020, 3CD030, 3CD050, 3CD075, 2SC4793, 3CD100, 3CD1010, 3CD102, 3CD103, 3CD1094, 3CD1290, 3CD1375, 3CD150
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