3CD1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
3CD1 Transistor Equivalent Substitute - Cross-Reference Search
3CD1 Datasheet (PDF)
3cd1.pdf
3CD1(3CF1) PNP A B C D E F G PCM Tc=25 10 W ICM 1 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=1mA 30 60 100 150 200 250 300 V V(BR)CEO ICE=1mA 30 60 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICEO VCE=20V 1.5 mA VBEsat
zx3cd1s1m832.pdf
ZX3CD1S1M832MPPS Miniature Package Power Solutions12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKYDIODE COMBINATION DUALSUMMARYPNP Transistor VCEO =-12V; RSAT = 65m ; = -4ACSchottky Diode VR = 40V; VF = 500mV (@1A); IC=1ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP this combination dualcomprises an ultra low saturation PNP transistor and a 1A Schottky bar
3cd100.pdf
3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V
3cd1375.pdf
2SB1375(3CD1375) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier applications. : 2SD2012(3DD2012)/Features: Low V , CE(sat)High P , complementary pair with 2SD2012(3DD2012). C/Absolute maximum ratings(Ta=25)
3cd1290.pdf
2SB1290(3CD1290) PNP /SILICON PNP TRANSISTOR PurposeGeneral power amplifier applications. :,,, 2SD1833(3DD1833) Features: Low V ,excellent DC current gain characteristics, wide SOA, complements the CE(sat)2SD1833(3DD1833). /A
3cd1094.pdf
2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose: Audio frequency power amplifier applications. : 2SD1585(3DD1585) Features: Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V
3cd1010.pdf
2SA1010(3CD1010) PNP /SILICON PNP TRANSISTOR :DC/DC Purpose: Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency power amplifiers. 2SC2334(3DD2334)
3cd102.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify
3cd150.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC
3cd103.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2626
