3CD1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor VCEO =-12V; RSAT = 65m ; = -4A C Schottky Diode VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky bar

3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V

2SB1375(3CD1375) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD2012(3DD2012) /Features Low V , CE(sat) High P , complementary pair with 2SD2012(3DD2012). C /Absolute maximum ratings(Ta=25 )

2SB1290(3CD1290) PNP /SILICON PNP TRANSISTOR Purpose General power amplifier applications. , , , 2SD1833(3DD1833) Features Low V ,excellent DC current gain characteristics, wide SOA, complements the CE(sat) 2SD1833(3DD1833). /A

2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD1585(3DD1585) Features Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC