3CD1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3CD1(3CF1) PNP A B C D E F G PCM Tc=25 10 W ICM 1 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=1mA 30 60 100 150 200 250 300 V V(BR)CEO ICE=1mA 30 60 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICEO VCE=20V 1.5 mA VBEsat

ZX3CD1S1M832MPPS Miniature Package Power Solutions12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKYDIODE COMBINATION DUALSUMMARYPNP Transistor VCEO =-12V; RSAT = 65m ; = -4ACSchottky Diode VR = 40V; VF = 500mV (@1A); IC=1ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP this combination dualcomprises an ultra low saturation PNP transistor and a 1A Schottky bar

3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V

2SB1375(3CD1375) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier applications. : 2SD2012(3DD2012)/Features: Low V , CE(sat)High P , complementary pair with 2SD2012(3DD2012). C/Absolute maximum ratings(Ta=25)

2SB1290(3CD1290) PNP /SILICON PNP TRANSISTOR PurposeGeneral power amplifier applications. :,,, 2SD1833(3DD1833) Features: Low V ,excellent DC current gain characteristics, wide SOA, complements the CE(sat)2SD1833(3DD1833). /A

2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose: Audio frequency power amplifier applications. : 2SD1585(3DD1585) Features: Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V

2SA1010(3CD1010) PNP /SILICON PNP TRANSISTOR :DC/DC Purpose: Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency power amplifiers. 2SC2334(3DD2334)

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC