3CD103 Specs and Replacement
Type Designator: 3CD103
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3CD103 Substitution
- BJT ⓘ Cross-Reference Search
3CD103 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC... See More ⇒
3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V... See More ⇒
2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD1585(3DD1585) Features Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V ... See More ⇒
Detailed specifications: 3CD020, 3CD030, 3CD050, 3CD075, 3CD1, 3CD100, 3CD1010, 3CD102, A940, 3CD1094, 3CD1290, 3CD1375, 3CD150, 3CD205, 3CD3, 3CD32, 3CD32A
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