All Transistors. 3CG1440 Datasheet

 

3CG1440 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3CG1440
   SMD Transistor Code: H1IR_H1IS
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89

 3CG1440 Transistor Equivalent Substitute - Cross-Reference Search

   

3CG1440 Datasheet (PDF)

 ..1. Size:262K  lzg
3cg1440.pdf

3CG1440
3CG1440

2SB1440(3CG1440) PNP /SILICON PNP TRANSISTOR Purpose: For low frequency output amplification 2SD2185(3DG2185) Features: Low V , complementary to 2SD2185(3DG2185). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO

 9.1. Size:180K  lzg
3cg1426.pdf

3CG1440
3CG1440

2SB1426(3CG1426) PNP /SILICON PNP TRANSISTOR /Features: Low saturation voltage. /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -3.0 A PC 750 mW Tj 150 Tstg -55150 /Electrical characteris

 9.2. Size:233K  lzg
3cg1424.pdf

3CG1440
3CG1440

2SB1424(3CG1424) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier. : Features: Low V ,excellent DC current gain characteristics. CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -20 V CBO V -20

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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