3CG3 Specs and Replacement

Type Designator: 3CG3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO92 SOT23

 3CG3 Substitution

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3CG3 datasheet

 ..1. Size:133K  china

 3cg3.pdf pdf_icon

3CG3

3CG3 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 45 60 75 90 105 V V(BR)CEO ICE=0.1mA 15 25 40 55 70 85 100 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 ... See More ⇒

 0.1. Size:304K  blue-rocket-elect

 br3cg3802.pdf pdf_icon

3CG3

2SA3802(BR3CG3802) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features / Applications Audio frequency power amplifier and switching applications. / Equivalent Circuit / Pinning 1... See More ⇒

 0.2. Size:108K  china

 3cg3906.pdf pdf_icon

3CG3

3CG3906 PNP PCM TA=25 300 mW ICM 200 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 0.1mA 40 V V(BR)CEO ICE 0.1mA 40 V V(BR)EBO IEB 0.1mA 5.0 V ICBO VCB=30V 50 nA IC=10mA VBEsat 0.85 IB=1mA V IC=10mA VCEsat 0.25 IB=1mA VCE=1V ... See More ⇒

Detailed specifications: 3CG2048, 3CG21, 3CG22, 3CG23, 3CG2905, 3CG2907, 3CG2907A, 3CG298, BC558, 3CG3906, 3CG4126, 3CG4403, 3CG5, 3CG5087, 3CG5415, 3CG56, 3CG560

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