3CG5T3Z Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG5T3Z
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
3CG5T3Z Transistor Equivalent Substitute - Cross-Reference Search
3CG5T3Z Datasheet (PDF)
..1. Size:111K china
3cg5t3z.pdf
3cg5t3z.pdf
3CG5T3Z PNP PCM TA=25 900 mW ICM 15 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 50 V V(BR)CEO ICE=10mA 40 V V(BR)EBO IEB=0.1mA 7.5 V ICBO VCB=40V 20 nA IEBO VCB=6V 20 nA VBEsat 0.9 IC=2A V IB=40mA VCEsat 0.175 VCE=2V hFE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
