3CG5T3Z Specs and Replacement

Type Designator: 3CG5T3Z

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 7.5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

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3CG5T3Z datasheet

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 3cg5t3z.pdf pdf_icon

3CG5T3Z

3CG5T3Z PNP PCM TA=25 900 mW ICM 15 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 50 V V(BR)CEO ICE=10mA 40 V V(BR)EBO IEB=0.1mA 7.5 V ICBO VCB=40V 20 nA IEBO VCB=6V 20 nA VBEsat 0.9 IC=2A V IB=40mA VCEsat 0.175 VCE=2V hFE ... See More ⇒

Detailed specifications: 3CG5087, 3CG5415, 3CG56, 3CG560, 3CG561, 3CG562, 3CG562M, 3CG562TM, 2SB817, 3CG6, 3CG608, 3CG608K, 3CG624, 3CG636, 3CG640, 3CG6517, 3CG673

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