3CG636 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG636
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
3CG636 Transistor Equivalent Substitute - Cross-Reference Search
3CG636 Datasheet (PDF)
..1. Size:112K china
3cg636.pdf
3cg636.pdf
3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
