3CG636 Specs and Replacement

Type Designator: 3CG636

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.83 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

 3CG636 Substitution

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3CG636 datasheet

 ..1. Size:112K  china

 3cg636.pdf pdf_icon

3CG636

3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2... See More ⇒

Detailed specifications: 3CG562, 3CG562M, 3CG562TM, 3CG5T3Z, 3CG6, 3CG608, 3CG608K, 3CG624, D209L, 3CG640, 3CG6517, 3CG673, 3CG673A, 3CG698, 3CG708, 3CG709A, 3CG715

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