All Transistors. 3CG636 Datasheet

 

3CG636 Datasheet and Replacement


   Type Designator: 3CG636
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.83 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 3CG636 Substitution

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3CG636 Datasheet (PDF)

 ..1. Size:112K  china
 3cg636.pdf pdf_icon

3CG636

3CG636 PNP PCM TA=25 830 mW ICM 1500 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 45 V V(BR)CEO ICE=0.1mA 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A VBEsat 1.0 IC=500mA V IB=50mA VCEsat 0.5 VCE=2

Datasheet: 3CG562 , 3CG562M , 3CG562TM , 3CG5T3Z , 3CG6 , 3CG608 , 3CG608K , 3CG624 , BC556 , 3CG640 , 3CG6517 , 3CG673 , 3CG673A , 3CG698 , 3CG708 , 3CG709A , 3CG715 .

History: RT2C00M

Keywords - 3CG636 transistor datasheet

 3CG636 cross reference
 3CG636 equivalent finder
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