All Transistors. 3CG709A Datasheet

 

3CG709A Datasheet and Replacement


   Type Designator: 3CG709A
   SMD Transistor Code: H1BQ_H1BR_H1BS
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
 

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3CG709A Datasheet (PDF)

 ..1. Size:341K  lzg
 3cg709a.pdf pdf_icon

3CG709A

2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR :/Purpose: General power amplifier applications. : 2SD601A(3DG601A)/Features:Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V EBO I -100 mA

 9.1. Size:23K  shaanxi
 3cg708.pdf pdf_icon

3CG709A

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG708PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source

Datasheet: 3CG624 , 3CG636 , 3CG640 , 3CG6517 , 3CG673 , 3CG673A , 3CG698 , 3CG708 , 2SD669 , 3CG715 , 3CG715F , 3CG719 , 3CG720 , 3CG733 , 3CG733M , 3CG739 , 3CG743 .

History: TED1402E | STX112 | D32S6 | SK3449 | M8050-D | 2PD601AW | BC308C-92

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