3CG709A Specs and Replacement

Type Designator: 3CG709A

SMD Transistor Code: H1BQ_H1BR_H1BS

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 2.7 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT23

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3CG709A datasheet

 ..1. Size:341K  lzg

 3cg709a.pdf pdf_icon

3CG709A

2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR /Purpose General power amplifier applications. 2SD601A(3DG601A) /Features Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V EBO I -100 mA ... See More ⇒

 9.1. Size:23K  shaanxi

 3cg708.pdf pdf_icon

3CG709A

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG708 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source ... See More ⇒

Detailed specifications: 3CG624, 3CG636, 3CG640, 3CG6517, 3CG673, 3CG673A, 3CG698, 3CG708, TIP2955, 3CG715, 3CG715F, 3CG719, 3CG720, 3CG733, 3CG733M, 3CG739, 3CG743

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