All Transistors. 3CG715F Datasheet

 

3CG715F Datasheet and Replacement


   Type Designator: 3CG715F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 160 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126F
 

 3CG715F Substitution

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3CG715F Datasheet (PDF)

 ..1. Size:352K  lzg
 3cg715f.pdf pdf_icon

3CG715F

2SA715F(3CG715F) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier applications. : 2SC1162F(3DA1162F)/Features: Complementary pair with 2SC1162F(3DA1162F). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -35 V CEO V -5 V EBO I

 8.1. Size:354K  lzg
 3cg715.pdf pdf_icon

3CG715F

2SA715(3CG715) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier applications. : 2SC1162(3DA1162)/Features: Complementary pair with 2SC1162(3DA1162). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -35 V CEO V -5.0 V EBO I -2.5

 9.1. Size:298K  lzg
 3cg719.pdf pdf_icon

3CG715F

2SA719(3CG719) PNP /SILICON PNP TRANSISTOR :/Purpose:AF output amplifier and driver. : 2SC1317(3DG1317)/Features:Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V EBO I -50

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: TED1402D | 3CG1440 | TEC9013I | 3CG4403 | 3CG1980M | JE9113D | 3CG778A

Keywords - 3CG715F transistor datasheet

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