3CG778 Specs and Replacement

Type Designator: 3CG778

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

 3CG778 Substitution

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3CG778 datasheet

 ..1. Size:237K  lzg

 3cg778.pdf pdf_icon

3CG778

2SA778(3CG778) 2SA778A(3CG778A) PNP /SILICON PNP TRANSISTOR /Purpose High voltage medium speed switching. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 3CG778 -150 V CBO V 3CG778A -180 3CG778 -150 V V CER 3CG778A -180 V EBO -5.0 V I -50 mA C P ... See More ⇒

 0.1. Size:237K  lzg

 3cg778a.pdf pdf_icon

3CG778

2SA778(3CG778) 2SA778A(3CG778A) PNP /SILICON PNP TRANSISTOR /Purpose High voltage medium speed switching. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 3CG778 -150 V CBO V 3CG778A -180 3CG778 -150 V V CER 3CG778A -180 V EBO -5.0 V I -50 mA C P ... See More ⇒

 9.1. Size:174K  lzg

 3cg774.pdf pdf_icon

3CG778

2SB774(3CG774) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier. V 2SD889(3DG889) EBO Features High V ,complementary pair with 2SD889(3DG889). EBO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO V -8.0 V EBO I -1... See More ⇒

Detailed specifications: 3CG720, 3CG733, 3CG733M, 3CG739, 3CG743, 3CG743A, 3CG764, 3CG774, 2SC828, 3CG778A, 3CG790A, 3CG798, 3CG807-16, 3CG812, 3CG817A, 3CG838, 3CG844

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