3CG812 Specs and Replacement
Type Designator: 3CG812
SMD Transistor Code: HM4_HM5_M6H_HM7
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT23
3CG812 Substitution
- BJT ⓘ Cross-Reference Search
3CG812 datasheet
2SA812(3CG812) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier application . 2SC1623(3DG1623) /Features Complementary pair with 2SC1623(3DG1623). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -100 mA C ... See More ⇒
2SA817A(3CG817A) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage amplifier and voltage amplifier. 30 35W 2SC1627A(3DG1627A) Purpose Driver stage of 30 to 35 watts application, complementary pair with 2SC1627A(3DG1627A). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
Detailed specifications: 3CG743A, 3CG764, 3CG774, 3CG778, 3CG778A, 3CG790A, 3CG798, 3CG807-16, D882P, 3CG817A, 3CG838, 3CG844, 3CG854S, 3CG8550, 3CG8550A, 3CG8551, 3CG857B
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