3CG812 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG812
SMD Transistor Code: HM4_HM5_M6H_HM7
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT23
3CG812 Transistor Equivalent Substitute - Cross-Reference Search
3CG812 Datasheet (PDF)
3cg812.pdf
2SA812(3CG812) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier application . : 2SC1623(3DG1623)/Features: Complementary pair with 2SC1623(3DG1623). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -100 mA C
3cg817a.pdf
2SA817A(3CG817A) PNP /SILICON PNP TRANSISTOR :/Purpose: Driver stage amplifier and voltage amplifier. 3035W 2SC1627A(3DG1627A) Purpose: Driver stage of 30 to 35 watts application, complementary pair with 2SC1627A(3DG1627A). /Absolute maximum ratings(Ta=25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BFG325W
