3CG838 Specs and Replacement
Type Designator: 3CG838
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO92
3CG838 Substitution
- BJT ⓘ Cross-Reference Search
3CG838 datasheet
2SA838(3CG838) PNP /SILICON PNP TRANSISTOR 2SC1359(3DG1359) Purpose For low-frequency amplification, complementary to 2SC1359(3DG1359). Features High transfer ratio f . T /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -30 V V CE... See More ⇒
Detailed specifications: 3CG774, 3CG778, 3CG778A, 3CG790A, 3CG798, 3CG807-16, 3CG812, 3CG817A, TIP120, 3CG844, 3CG854S, 3CG8550, 3CG8550A, 3CG8551, 3CG857B, 3CG893, 3CG9
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