3CG9012 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG9012
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 64
Noise Figure, dB: -
Package: TO92
3CG9012 Transistor Equivalent Substitute - Cross-Reference Search
3CG9012 Datasheet (PDF)
3cg9012.pdf
PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG9012 MAIN CHARACTERISTICS Package I -500mA CV -20V CEOP 625mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92
3cg9012.pdf
S9012(3CG9012) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , S9013(3DG9013) C C FEFeatures: High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE/Absolute maximum ratings(Ta=25)
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
