3CG9012 Specs and Replacement
Type Designator: 3CG9012
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 64
Package: TO92
3CG9012 Substitution
- BJT ⓘ Cross-Reference Search
3CG9012 datasheet
S9012(3CG9012) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , h , S9013(3DG9013) C C FE Features High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE /Absolute maximum ratings(Ta=25 ) ... See More ⇒
Detailed specifications: 3CG844 , 3CG854S , 3CG8550 , 3CG8550A , 3CG8551 , 3CG857B , 3CG893 , 3CG9 , TIP41C , 3CG926 , 3CG937 , 3CG950 , 3CG952 , 3CG953 , 3CG953M , 3CG965 , 3CG966 .
Keywords - 3CG9012 pdf specs
3CG9012 cross reference
3CG9012 equivalent finder
3CG9012 pdf lookup
3CG9012 substitution
3CG9012 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
d313 transistor | 2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet