All Transistors. 3CG9012 Datasheet

 

3CG9012 Datasheet and Replacement


   Type Designator: 3CG9012
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 64
   Noise Figure, dB: -
   Package: TO92
 

 3CG9012 Substitution

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3CG9012 Datasheet (PDF)

 ..1. Size:561K  jilin sino
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3CG9012

PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG9012 MAIN CHARACTERISTICS Package I -500mA CV -20V CEOP 625mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

 ..2. Size:217K  foshan
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3CG9012

S9012(3CG9012) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , S9013(3DG9013) C C FEFeatures: High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE/Absolute maximum ratings(Ta=25)

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TIP35BF | BCPC4373

Keywords - 3CG9012 transistor datasheet

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