3CK3 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CK3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3CK3 Transistor Equivalent Substitute - Cross-Reference Search
3CK3 Datasheet (PDF)
3ck3.pdf
3CK3 PNP A B C D E F G PCM 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 25 35 25 35 40 V V(BR)CEO ICE=0.1mA 15 30 20 30 20 30 35 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A
3ck304.pdf
3CK304 PNP A B C D E F PCM TC=25 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=5A V(BR)CBO ICB=1mA 25 50 100 150 200 250 V V(BR)CEO ICE=1mA 25 50 100 150 200 250 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=0.5VCB 1.0 mA
3ck301.pdf
3CK301 PNP C D E F G H PCM TC=25 50 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 3 /W IC=3A V(BR)CBO ICB=2mA 80 110 150 200 250 300 V V(BR)CEO ICE=2mA 80 110 150 200 250 300 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=0.5VCBO 2.0 mA
3ck35.pdf
3CK35 PNP B C D E F TC=25 15 PCM W TC=75 10 ICM 3 A Tjm 175 Tstg -55~150 Rth 10 /W V(BR)CBO ICB=1mA 50 80 110 150 200 V V(BR)CEO ICE=1mA 50 80 110 150 200 V V(BR)EBO IEB=1mA 5 V ICBO1 0.1 A ICBO2 1 A VBEsa
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
