3DD03T Specs and Replacement
Type Designator: 3DD03T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
3DD03T Substitution
- BJT ⓘ Cross-Reference Search
3DD03T datasheet
3DD03T(DD03T) NPN A B C PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.33 /W IC=1A V(BR)CBO ICB=5mA 80 150 200 V V(BR)CEO ICE=5mA 60 100 150 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=30V 0.5 mA ICEO VCE=30V 1.0 mA IEB... See More ⇒
Detailed specifications: 3CK2, 3CK3, 3CK301, 3CK304, 3CK35, 3CK4, 3CK5323, 3CK9, 2SC2073, 3DD04T, 3DD05, 3DD05T, 3DD1, 3DD10, 3DD100, 3DD101, 3DD102
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