3DD04T Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD04T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DD04T Transistor Equivalent Substitute - Cross-Reference Search
3DD04T Datasheet (PDF)
..1. Size:145K china
3dd04t.pdf
3dd04t.pdf
3DD04T(DD04T) NPN PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.33 /W IC=1A V(BR)CBO ICB=2mA 200 V V(BR)CEO ICE=2mA 160 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=80V 0.5 mA ICEO VCE=80V 1.0 mA IEBO VEB=4V 0.5 mA VBEsat
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
