All Transistors. 3DD04T Datasheet

 

3DD04T Datasheet and Replacement


   Type Designator: 3DD04T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
 

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3DD04T Datasheet (PDF)

 ..1. Size:145K  china
 3dd04t.pdf pdf_icon

3DD04T

3DD04T(DD04T) NPN PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.33 /W IC=1A V(BR)CBO ICB=2mA 200 V V(BR)CEO ICE=2mA 160 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=80V 0.5 mA ICEO VCE=80V 1.0 mA IEBO VEB=4V 0.5 mA VBEsat

Datasheet: 3CK3 , 3CK301 , 3CK304 , 3CK35 , 3CK4 , 3CK5323 , 3CK9 , 3DD03T , 2SC4793 , 3DD05 , 3DD05T , 3DD1 , 3DD10 , 3DD100 , 3DD101 , 3DD102 , 3DD103 .

History: 2SC3158 | 2N3512 | 2SC2466 | 2N2814 | PTC108 | 2N1206 | 2N4864

Keywords - 3DD04T transistor datasheet

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