All Transistors. 3DD11 Datasheet

 

3DD11 Datasheet and Replacement


   Type Designator: 3DD11
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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3DD11 Datasheet (PDF)

 ..1. Size:28K  shaanxi
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3DD11

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit

Datasheet: 3DD05T , 3DD1 , 3DD10 , 3DD100 , 3DD101 , 3DD102 , 3DD103 , 3DD104 , BC546 , 3DD12 , 3DD122 , 3DD127D3 , 3DD127D5 , 3DD128A8D , 3DD128FA7D , 3DD128FH3D , 3DD128FH5D .

History: BUS13 | FMMT92DCSM | 3CG102 | 2N2601 | 3DK501D | 2SAR293P5

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