All Transistors. 3DD11 Datasheet

 

3DD11 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD11

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DD11 Transistor Equivalent Substitute - Cross-Reference Search

 

3DD11 Datasheet (PDF)

1.1. 3dd11.pdf Size:28K _china

3DD11

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit

Datasheet: 3DD05T , 3DD1 , 3DD10 , 3DD100 , 3DD101 , 3DD102 , 3DD103 , 3DD104 , 9012 , 3DD12 , 3DD122 , 3DD127D3 , 3DD127D5 , 3DD128A8D , 3DD128FA7D , 3DD128FH3D , 3DD128FH5D .

 


3DD11
  3DD11
  3DD11
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |