3DD11 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD11
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DD11 Transistor Equivalent Substitute - Cross-Reference Search
3DD11 Datasheet (PDF)
1.1. 3dd11.pdf 
Size:28K _china
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit
Datasheet: 3DD05T , 3DD1 , 3DD10 , 3DD100 , 3DD101 , 3DD102 , 3DD103 , 3DD104 , 9012 , 3DD12 , 3DD122 , 3DD127D3 , 3DD127D5 , 3DD128A8D , 3DD128FA7D , 3DD128FH3D , 3DD128FH5D .
