All Transistors. 3DD11 Datasheet

 

3DD11 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD11

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DD11 Transistor Equivalent Substitute - Cross-Reference Search

 

3DD11 Datasheet (PDF)

1.1. 3dd11.pdf Size:28K _china

3DD11

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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