3DD11 Specs and Replacement

Type Designator: 3DD11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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3DD11 datasheet

 ..1. Size:28K  shaanxi

 3dd11.pdf pdf_icon

3DD11

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards QZJ840611 4. Use for Low-speed swit... See More ⇒

Detailed specifications: 3DD05T, 3DD1, 3DD10, 3DD100, 3DD101, 3DD102, 3DD103, 3DD104, 2SA1837, 3DD12, 3DD122, 3DD127D3, 3DD127D5, 3DD128A8D, 3DD128FA7D, 3DD128FH3D, 3DD128FH5D

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