3DD122 Specs and Replacement

Type Designator: 3DD122

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220

 3DD122 Substitution

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3DD122 datasheet

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3DD122

3DD122(TIP122) NPN PCM Tc=25 65 W 5 I A 8 Tjm 150 Tstg -55 150 VCE=10V Rth 1.9 /W IC=1.5A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=10mA 100 V V(BR)EBO IEB=1mA 5.0 V VCB= 100V 0.2 ICBO VCB= 0.5V mA BR CBO 2.0 Tc=125 ... See More ⇒

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3DD122

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3DD122

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3DD122

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Detailed specifications: 3DD10, 3DD100, 3DD101, 3DD102, 3DD103, 3DD104, 3DD11, 3DD12, TIP35C, 3DD127D3, 3DD127D5, 3DD128A8D, 3DD128FA7D, 3DD128FH3D, 3DD128FH5D, 3DD128FH6D, 3DD128FH8D

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