3DD13003H8D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD13003H8D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220AB
3DD13003H8D Transistor Equivalent Substitute - Cross-Reference Search
3DD13003H8D Datasheet (PDF)
3dd13003h8d.pdf
NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W
3dd13003h1d.pdf
NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
3dd13003h3d.pdf
R NPN 3DD13003H3D1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .