3DD13007X1 Specs and Replacement
Type Designator: 3DD13007X1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220AB
3DD13007X1 Substitution
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3DD13007X1 datasheet
NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80 ... See More ⇒
NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25 ... See More ⇒
MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications. ... See More ⇒
MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin... See More ⇒
Detailed specifications: 3DD13005G8D, 3DD13005GRD, 3DD13005N7D, 3DD13005N8D, 3DD13005P8D, 3DD13007, 3DD13007B8, 3DD13007H8D, TIP41, 3DD13007Y8, 3DD13007Z7, 3DD13007Z8, 3DD13009, 3DD13009A8, 3DD13009AN, 3DD13009C8, 3DD13009X8D
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