3DD171 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DD171 Specs and Replacement

Type Designator: 3DD171

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DD171 Substitution

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3DD171 datasheet

..1. Size:33K shaanxi

3dd171.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD171(172), 3DD175(176) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. U... See More ⇒

9.1. Size:134K china

3dd1724.pdf pdf_icon

3DD1724 NPN PCM TC=75 60 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.67 /W IC=1.5A V(BR)CBO ICB=5mA 120 V V(BR)CEO ICE=7mA 80 V V(BR)EBO IEB=10mA 10 V ICBO VCB=80V 0.1 mA ICEO VCE=50V 0.5 mA IEBO VEB=4V 0.1 mA VBEsat 1.5... See More ⇒

9.2. Size:123K china

3dd176.pdf pdf_icon

3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V ... See More ⇒

9.3. Size:123K china

3dd175.pdf pdf_icon