3DD271
Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD271
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200
W
Maximum Collector-Emitter Voltage |Vce|: 300
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 175
°C
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package:
TO3
3DD271
Transistor Equivalent Substitute - Cross-Reference Search
3DD271
Datasheet (PDF)
..1. Size:32K shaanxi
3dd271.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD271(272), 3DD275(276) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. U
9.1. Size:26K shaanxi
3dd275.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD275(3DD276)NPN Silicon Low Frequency High Power Transistor Features: 6. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 7. Good temperature stability.Excellent thermal fatigue capability. 8. Implementation of standards: GJB33 A-97 9. Use for Low-
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