3DD271 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DD271 Specs and Replacement

Type Designator: 3DD271

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

3DD271 Substitution

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3DD271 datasheet

..1. Size:32K shaanxi

3dd271.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD271(272), 3DD275(276) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. U... See More ⇒

9.1. Size:26K shaanxi

3dd275.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD275(3DD276) NPN Silicon Low Frequency High Power Transistor Features 6. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 7. Good temperature stability.Excellent thermal fatigue capability. 8. Implementation of standards GJB33 A-97 9. Use for Low-... See More ⇒

Detailed specifications: 3DD255, 3DD257, 3DD259, 3DD260, 3DD262, 3DD264, 3DD2655, 3DD267, SS8050, 3DD275, 3DD3, 3DD3015A1, 3DD3015A3, 3DD3020A3, 3DD3020A4, 3DD3020A6, 3DD3040A1